Method for fabricating spin logic devices from in-situ deposited magnetic stacks

ABSTRACT

Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ. Described is an apparatus comprising: a magnet formed on a substrate or a template, the magnet being formed under crystallographic, electromagnetic, or thermodynamic conditions, the magnet having an interface; and a first layer of non-magnet conductive material formed on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ.

BACKGROUND

Spin logic can enable a new class of computing circuits andarchitectures for the beyond Complementary Metal Oxide Semiconductor(CMOS) computing circuits and architectures. However, existingexperimental demonstrations of spin logic devices suffer from low spininjection efficiency due to the requirement for an air break during thedeposition of critical spin injection layers, and due to reliance onmulti-angle deposition with a mask-in-chamber flow (where deposition isdone with a non-contact mask, and where different geometries areobtained via multi-angle deposition). These existing processes sufferfrom low interface quality (i.e., interface quality is rough) and thuslow injected spin polarization. These existing processes also sufferfrom the difficulty to integrate such processes into a High VolumeManufacturing (HVM) process.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the disclosure will be understood more fully from thedetailed description given below and from the accompanying drawings ofvarious embodiments of the disclosure, which, however, should not betaken to limit the disclosure to the specific embodiments, but are forexplanation and understanding only.

FIGS. 1A-C illustrate top and side views of a stack of substrate withmagnet and non-magnet conductive layer formed in-situ, according to someembodiments of the disclosure.

FIGS. 2A-C illustrate top and side views of the stack with positiveresist pattern deposition, according to some embodiments of thedisclosure.

FIGS. 3A-C illustrate top and side views of the stack after the positiveresist is etched selectively, according to some embodiments of thedisclosure.

FIGS. 4A-C illustrate top and side views of the stack after the positiveresist is removed, according to some embodiments of the disclosure.

FIGS. 5A-C illustrate top and side views of the stack with channel andpad resist deposition, according to some embodiments of the disclosure.

FIGS. 6A-C illustrate top and side views of the stack with selectiveetching of the non-magnet conductive material, according to someembodiments of the disclosure.

FIGS. 7A-C illustrate top and side views of the stack with channel andpad resist being removed, according to some embodiments of thedisclosure.

FIGS. 8A-C illustrate top and side views of the stack with conformaldielectric layer deposition to prevent current going through the etchedmagnet sidewalls to the channel, according to some embodiments of thedisclosure.

FIGS. 9A-C illustrate top and side views of the stack with channel andpad resist deposition, according to some embodiments of the disclosure.

FIGS. 10A-C illustrate top and side views of the stack with timed etchto expose Conformal Dielectric Layer (ILD) on top of the non-magnetconductive layer without etching the magnet sidewalls, according to someembodiments of the disclosure.

FIGS. 11A-C illustrate top and side views of the stack with channel andpad deposition, according to some embodiments of the disclosure.

FIGS. 11D-F illustrate top and side views of the stack after resistlift-off, according to some embodiments of the disclosure.

FIGS. 12A-C illustrate top and side views of a stack having a substratewith resist disposition, according to some embodiments of thedisclosure.

FIGS. 13A-C illustrate top and side views of the stack with magnet andthin channel deposition, according to some embodiments of thedisclosure.

FIGS. 14A-C illustrate top and side views of the stack after lift-off,according to some embodiments of the disclosure.

FIGS. 15A-C illustrate top and side views of the stack after resistdeposition and selective etching to form patterns for channel and pad,according to some embodiments of the disclosure.

FIGS. 16A-C illustrate top and side views of the stack after thickchannel metal deposition, according to some embodiments of thedisclosure.

FIGS. 17A-C illustrate top and side views of the stack after lift-off ofregion defined by the resist deposition, according to some embodimentsof the disclosure.

FIGS. 18A-C illustrate top and side views of the stack after selectiveetch of non-magnet conductive material, according to some embodiments ofthe disclosure.

FIG. 19A illustrates a side view of a lateral spin logic device sideenabled in-situ process flow, according to some embodiments of thedisclosure.

FIG. 19B illustrates a bit schematic view of the lateral spin logicdevice (e.g., an ASL device) of FIG. 19A enabled by the in-situ process,according to some embodiments of the disclosure.

FIG. 20 illustrates a low width lateral spin valve used as a read headsensor enabled by the in-situ process, according to some embodiments ofthe disclosure.

FIGS. 21A-B illustrates formation of a magnetic texture that can bedetected using Transmission Electron Microscopy (TEM).

FIG. 22 illustrates a smart device or a computer system or a SoC(System-on-Chip) with lateral spin logic devices formed from in-situdeposited magnetic stacks, according to some embodiments.

DETAILED DESCRIPTION

Current processing of magnetic thin files in non-local spin valvegeometries needs air exposure for patterning after the deposition of themagnetic layer and before the deposition of the channel. This air breakleads to surface oxidization on the magnet. An incomplete removal of theoxide and/or aggressive treatments used to remove surface oxidizationresults in lower spin injection efficiencies into the channel material.

One method to fabricate a non-lateral spin valve device is to use atwo-step process. In the first step, a magnetic layer is deposited intoa patterned resist followed by lift-off and cleaning. In the secondstep, a resist is patterned on top of the magnetic layer for depositionof the channel material. In this process, the surface of the magnet isoxidized during processing and must be removed in-situ with a surfacetreatment prior to the deposition of the channel material. In thisprocess, the resulting magnet/channel (after oxidization is removed)provides a poor interface quality relative to immediate deposition ofthe two material sequentially in vacuum.

Another method to fabricate non-lateral spin valve device is to depositthe magnet followed by in-situ channel deposition. In this method, toachieve the necessary patterning, the deposition needs to be veryshallow and angles for incoming beams for deposition need to becontrolled carefully in order to control the placement of the twomaterials into the necessary geometry. The shallow and controlled anglesare not practical for HVM.

Some embodiments described here are formed from a method which isindependent of an air break for patterning one layer before depositingthe next i.e., an in-situ processing method. The term “in-situ” heregenerally refers to no air break (e.g., in vacuum conditions) and acontinuous thermodynamic, crystallographic, or electromagneticconditioning during material formation. The term “in-situ” also refersto the magnet and metal cap both being deposited in the same vacuumchamber (“in-situ”). The term “ex-situ” generally refers to when themagnet is deposited, removed to air, oxide grows, and then the device islater coated with the channel or cap material (either in vacuum or inanother condition). The “in-situ” part prevents the oxidation orroughening of the magnet surface that can occur when it leaves thesafety of ultra-high vacuum. Some embodiments describe a processingmethod that does not need (i.e., independent of) multi-angle deposition.

In some embodiments, the process based on in-situ processing of magneticspin valves is a subtractive process flow that works with in-situdeposited magnet/spin channel stacks. In some embodiments, the processbegins with an in-situ deposited substrate or template where the magnetis formed in its ideal crystallographic, thermodynamic, orelectromagnetic conditions. In some embodiments, the magnet's interfaceis protected or preserved in-situ with a layer of a known non-magnetconductive channel or capping material. In some embodiments, a stack oflayers (conductive and/or non-conductive) are subtractively patterned onthe substrate such that the critical magnet/channel interface throughwhich spin polarized currents flow is not exposed to air or chemicallymodified.

There are many technical effects of the various embodiments. Forexample, the method of in-situ processing of magnetic spin valvespreserves the quality of the interface between a magnetic material(which is used for spin polarization) and a channel (a non-magneticmaterial used for transmission of spin-polarized electrons). The methodof in-situ processing of magnetic spin valves also enables the use ofmagnetic stacks with other advanced materials. The method of in-situprocessing of magnetic spin valves described with reference to someembodiments enables a wide class of magnetic logic and sensing devices.For example, the method of in-situ processing can be used to formlateral spin logic devices, a low width lateral spin value used as aread head sensor, etc.

In the following description, numerous details are discussed to providea more thorough explanation of embodiments of the present disclosure. Itwill be apparent, however, to one skilled in the art, that embodimentsof the present disclosure may be practiced without these specificdetails. In other instances, well-known structures and devices are shownin block diagram form, rather than in detail, in order to avoidobscuring embodiments of the present disclosure.

Note that in the corresponding drawings of the embodiments, signals arerepresented with lines. Some lines may be thicker, to indicate moreconstituent signal paths, and/or have arrows at one or more ends, toindicate primary information flow direction. Such indications are notintended to be limiting. Rather, the lines are used in connection withone or more exemplary embodiments to facilitate easier understanding ofa circuit or a logical unit. Any represented signal, as dictated bydesign needs or preferences, may actually comprise one or more signalsthat may travel in either direction and may be implemented with anysuitable type of signal scheme.

Throughout the specification, and in the claims, the term “connected”means a direct electrical or magnetic connection between the things thatare connected, without any intermediary devices. The term “coupled”means either a direct electrical or magnetic connection between thethings that are connected or an indirect connection through one or morepassive or active intermediary devices. The term “circuit” means one ormore passive and/or active components that are arranged to cooperatewith one another to provide a desired function. The meaning of “a,”“an,” and “the” include plural references. The meaning of “in” includes“in” and “on.”

The term “scaling” generally refers to converting a design (schematicand layout) from one process technology to another process technologyand subsequently being reduced in layout area. The term “scaling”generally also refers to downsizing layout and devices within the sametechnology node. The term “scaling” may also refer to adjusting (e.g.,slowing down or speeding up—i.e. scaling down, or scaling uprespectively) of a signal frequency relative to another parameter, forexample, power supply level. The terms “substantially,” “close,”“approximately,” “near,” and “about,” generally refer to being within+/−20% of a target value.

Unless otherwise specified the use of the ordinal adjectives “first,”“second,” and “third,” etc., to describe a common object, merelyindicate that different instances of like objects are being referred to,and are not intended to imply that the objects so described must be in agiven sequence, either temporally, spatially, in ranking or in any othermanner.

FIGS. 1-12 together describe a process flow that uses in-situ depositedmagnet/spin channel stacks that allows for preservation (or protection)of the quality of the interface between a magnetic material (used forspin polarization) and a channel (a non-magnetic material used fortransmission of spin-polarized electrons), according to someembodiments. Each figure shows a top and side view of the stack after acertain process is complete.

Although FIGS. 1-12 are shown in a particular order, the order of theactions can be modified. Thus, the illustrated embodiments can beperformed in a different order, and some processes may be performed inparallel. Some of the processes and/or operations listed in FIGS. 1-12are optional in accordance with certain embodiments. The numbering ofthe figures presented is for the sake of clarity and is not intended toprescribe an order of operations in which the various processes mustoccur. Additionally, operations from the various process flows may beutilized in a variety of combinations.

FIGS. 1A-C illustrate top view 100 and side views (120 and 130)respectively of a stack of substrate with magnet and non-magnetconductive layer formed in-situ, according to some embodiments of thedisclosure. Here, side view 120 in FIG. 1B is along the “yy” dottedline, and side view 130 in FIG. 1C is along the “xx” dotted line shownin top view 100 of FIG. 1A.

In some embodiments, the process of forming a lateral spin logic devicebegins with an in-situ deposited stack. In some embodiments, the in-situdeposited stack comprises a substrate or template 101, magnet 102, andnon-magnet conductive material 103. In some embodiments, magnet 102 andnon-magnet conductive material 103 (also referred here as the magnetcap, or first non-magnet conductive material) are patterned together.This step protects the in-situ spin interface from the magnet to thechannel. In some embodiments, when the stack is provided, an alignmentmark 104 is formed on top of non-magnet conductive material 103. Onepurpose of the alignment mark 104 is to provide a reference to locationsof layers on the stack.

In some embodiments, after magnet cap 103 is formed on magnet 102, thestructure is annealed. For example, the structure having magnet 102 andmagnet cap 103 is heated to 300 to 400 degree Celsius for a few minutesto fix any defect in the interface between magnet 102 and magnet cap 103(i.e., magnet interface is reformed to smooth the interface betweenmagnet 102 and magnet cap 103). In some embodiments, the process ofannealing is performed after the entire structure is formed.

Examples of materials used to form substrate or template 101 (e.g., 30nm in thickness) include one of: SiO2, MgO, STO, BFO, Ag, GdScO₃,Nb:STO, DyScO₃, etc. Examples of materials used to form magnet 102include one of: Heusler alloys (e.g., Cu₂MnAl, Cu₂MnIn, Cu₂MnSn,Ni₂MnAl, Ni₂MnIn, Ni₂MnSn, Ni₂MnSb, Ni₂MnGa, Co₂MnAl, Co₂MnSi, Co₂MnGa,Co₂MnGe, Pd₂MnAl, Pd₂MnIn, Pd₂MnSn, Pd₂MnSb, Co₂FeSi, Co₂FeAl, Fe₂Val,Mn₂VGa, Co₂FeGe, etc.), or ferromagnetic materials (e.g., Co, Fe, Fe₂O₃,FeOFe₂O₃, NiOFe₂O₃, CuOFe₂O₃, MgOFe₂O₃, MnBi, Ni, MnSb, MnOFe₂O₃,Y₃Fe₅O₁₂, CrO₂, MnAs, Gd, Dy, Eu, etc.), etc. Examples of non-magnetconductive material 103 include one of: Cu, Ag, Al, Au, Bi, BiSe, BiAu,Cu alloyed or doped with Ir, Os, Bi, or Si.

FIGS. 2A-C illustrate top view 200 and side views (220 and 230) of thestack with positive resist pattern deposition, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 2A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 220 in FIG.2B is along the “yy” dotted line, and side view 230 in FIG. 2C is alongthe “xx” dotted line shown in top view 200 of FIG. 2A.

In some embodiments, after the in-situ deposited stack is provided, apositive photo resist pattern 201 is formed on the non-magnet conductivematerial 103. In this example, positive photo resist pattern 201 isformed over the alignment mark 104 and the central region as twohorizontal bars perpendicular to the “yy” dotted line. In someembodiments, negative photoresist may be used instead of positive photoresist. In such embodiments, instead of exposing the area defined bywhere the material stays, all the other area is exposed. For alithography, mask-based Ultra-Violet (UV) exposure using negativephotoresist can be used. In some embodiments, positive photo resistpattern 201 identifies the regions of the magnet “bars.” In thisexample, two magnet bar regions are identified by positive photo resistpattern 201. In later processes described here, a conductive channel isformed over the magnetic bars.

FIGS. 3A-C illustrate top view 300 and side views (320 and 330) of thestack after positive resist 201 is etched selectively, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 3A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 320 in FIG.3B is along the “yy” dotted line, and side view 130 in FIG. 3C is alongthe “xx” dotted line shown in top view 300 of FIG. 3A.

In some embodiments, after the pattern of positive photo resist 201 isformed, selective etching is performed to etch regions outside of thepositive photo resist 201 down to substrate 101 (i.e., selective regionsof magnet 102 and non-magnet conductive material 103 are etched) toidentify magnet dimensions. In this example, one magnet is thinner thanthe other magnet. In other embodiments, different shapes and sizes forthe magnets can be achieved.

FIGS. 4A-C illustrate top 400 and side views (420 and 430) of the stackafter positive resist 201 is removed, according to some embodiments ofthe disclosure. It is pointed out that those elements of FIGS. 4A-Chaving the same reference numbers (or names) as the elements of anyother figure can operate or function in any manner similar to thatdescribed, but are not limited to such. Here, side view 420 in FIG. 4Bis along the “yy” dotted line, and side view 430 in FIG. 4C is along the“xx” dotted line shown in top view 400 of FIG. 4A.

In some embodiments, after selective etching of non-magnet conductivelayer 103 and magnet 102, positive photo resist 201 is removed whichleaves behind magnetic bars 102 with corresponding non-magnetnon-conductive layers 103 exposed.

FIGS. 5A-C illustrate top 500 and side views (520 and 530) of the stackwith channel and pad resist deposition, according to some embodiments ofthe disclosure. It is pointed out that those elements of FIGS. 5A-Chaving the same reference numbers (or names) as the elements of anyother figure can operate or function in any manner similar to thatdescribed, but are not limited to such. The side view 520 in FIG. 5B isalong the “yy” dotted line, and side view 430 in FIG. 5C is along the“xx” dotted line shown in top view 500 of FIG. 5A.

In some embodiments, channel and/or pad photo resist 501 is depositedover the non-magnet conductive material 103. In this example,preparation is made to form a channel over the in-situ stack (i.e.,magnetic bars 102 and non-magnet non-conductive layers 103).

FIGS. 6A-C illustrate top view 600 and side views (620 and 630) of thestack with selective etching of non-magnet conductive material 103,according to some embodiments of the disclosure. It is pointed out thatthose elements of FIGS. 6A-C having the same reference numbers (ornames) as the elements of any other figure can operate or function inany manner similar to that described, but are not limited to such. Here,side view 620 in FIG. 6B is along the “yy” dotted line through themiddle of the stack shown in top view 600 of FIG. 6A, while side view630 in FIG. 6C is along the “xx” dotted line.

In some embodiments, non-magnet conductive layer 103 (i.e., theprotective layer or magnet cap) is selectively etched (e.g., using wetetching or dry etching techniques) to expose portions of the top ofmagnet 102 in areas outside of the channel and/or pad positive resist501. In this example, the channel-seed is etched to remove theprotective layer on the magnet where the magnet does not contact thespin channel or interconnect pads.

Here, 103 is the magnet cap layer. In some embodiments, magnet cap layer103 is of the same material as the channel, or possibly somethingdifferent. In some embodiments, material for magnet cap layer 103 isnon-magnetic. In some embodiments, material for magnet cap layer 103 hasa low atomic number so that there may not be a lot of spin orbitcoupling. In such embodiments, processing with minimal oxidation cansurvive and can preserve a good interface between the magnet and itself.The process of etching, in some embodiments, is done to prevent shortingof the pad contacts to the channel and shunt out the current paththrough the magnet. The process described with reference to FIGS. 4-6define the interface non-magnet conductive layer 103.

FIGS. 7A-C illustrate top view 700 and side views (720 and 730) of thestack with channel and pad resist being removed, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 7A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 720 in FIG.7B is along the “yy”, and side view 730 in FIG. 7C is along the “xx”dotted line shown in top view 700 of FIG. 7A.

In this process, the mechanical position of the channel and the pads aredefined with alignment to the exposed in-situ non-magnet conductivelayer 103. In some embodiments, channel and/or pad positive resist 501is removed which exposes the non-magnet conductive layer 103 along theto-be formed channel region.

FIGS. 8A-C illustrates top view 800 and side views (820 and 830) of thestack with conformal dielectric layer deposition to prevent currentgoing through the etched magnet sidewalls to the channel, according tosome embodiments of the disclosure. It is pointed out that thoseelements of FIGS. 8A-C having the same reference numbers (or names) asthe elements of any other figure can operate or function in any mannersimilar to that described, but are not limited to such. Here, side view820 in FIG. 8B is along the “yy” dotted line, and side view 830 in FIG.8C is along the “xx” dotted line shown in top view 800 of FIG. 8A. Insome embodiments, conformal dielectric layer (ILD) 801 is deposited toprevent current going through etched magnet sidewalls to the to-beformed channel. In this example, the channel is to be formed along thedotted line “yy.”

FIGS. 9A-C illustrate top view 900 and side views (920 and 930) of thestack with channel and pad resist deposition, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 9A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 920 in FIG.9B is along the “yy” dotted line through the middle of the stack shownin top view 900 of FIG. 9A, while side view 930 in FIG. 9C is along the“xx” dotted line. In some embodiments, channel and/or pad resist 901 isdeposited. In some cases, negative tone may be preferred forelectron-beam writers.

FIGS. 10A-C illustrate top view 1000 and side views (1020 and 1030) ofthe stack with timed etch to expose ILD on top of the non-magnetconductive layer without etching the magnet sidewalls, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 10A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 1020 inFIG. 10B is along the “yy” dotted line through the middle of the stackshown in top view 1000 of FIG. 10A, while side view 1030 in FIG. 10C isalong the “xx” dotted line.

In this process, the interface between the in-situ deposited non-magnetconductive layer 103 and the spin channel is fabricated. In someembodiments, the interface between in-situ non-magnet conductive layer103 and the spin channel is also chemically cleaned to ensure spin andcharge contact. In some embodiments, ILD 801 is etched to expose top ofnon-magnet conductive layer 103. In some embodiments, when ILD 801 isetched, the sidewalls of magnet 102 and non-magnet conductive layer 103are not cleared (i.e., the sidewalls remain covered with ILD 801). Insome embodiments, as ILD 801 is timed etched, parts of substrate 101 areexposed.

Here, the term “timed” generally refers to the process of etching thatis applied for a certain time to remove the thin cap of ILD material onthe top surfaces of the metals. In some embodiments, the etch processmay be used to only remove the thickness of material deposited on thetop of the metal so that the plug of material 801 is left to protect theside walls of the magnet. If for example, an arbitrarily long etch isperformed, all the material including the desired plug of material thatprotects the sidewall 801 may be removed. The process works because theILD material is conformal (i.e., deposits the same thickness of thematerial on any surface—side, top, or bottom) but that the etch isdirectional—only removes material from one direction—straight down. Ifthe etch process is isotropic, then the process of removing the sameamount of material along any direction (i.e., side, top or bottom) maynot work. Here, 1001 is the remaining resist. Some of it might getconsumed during the ILD etch, but in principle it should still stickaround to guide where the etch attacks the patterned structures.

FIGS. 11A-C illustrate top view 1100 and side views (1120 and 1130) ofthe stack with channel and pad deposition, according to some embodimentsof the disclosure. It is pointed out that those elements of FIGS. 11A-Chaving the same reference numbers (or names) as the elements of anyother figure can operate or function in any manner similar to thatdescribed, but are not limited to such. The side view 1120 in FIG. 11Bis along the “yy” dotted line through the middle of the stack shown intop view 1100 of FIG. 11A, while side view 1130 in FIG. 11C is along the“xx” dotted line.

After ILD 801 is timed etched, another non-magnet conductive material1101 (also referred to here as the second non-magnet conductivematerial) is deposited. Non-magnet conductive material 1101 forms thechannel and pad. In some embodiments, the channel and pads are depositedsimultaneously to reduce parasitic contact resistances. In someembodiments, non-magnet conductive material 1101 is the same material asnon-magnet conductive material 103. In some embodiments, non-magnetconductive material 1101 is different material from non-magnetconductive material 103. The process of FIGS. 11A-C can also be used toform other interconnects. In some embodiments, the breaks or roughnessbetween the interface of non-magnet conductive materials 103 and 1101can be healed through proper annealing.

FIGS. 11D-F illustrate top 1140 and side views (1150 and 1160) of thestack after lift-off of resist 1001, according to some embodiments ofthe disclosure. It is pointed out that those elements of FIGS. 11D-Fhaving the same reference numbers (or names) as the elements of anyother figure can operate or function in any manner similar to thatdescribed, but are not limited to such. The side view 1150 in FIG. 11Eis along the “yy” dotted line through the middle of the stack shown intop view 1140 of FIG. 11D, while side view 1160 in FIG. 11F is along the“xx” dotted line.

FIGS. 12-18 together describe an alternate process flow with lift-offprocess, according to some embodiments. This process also allows forpreservation (or protection) of the quality of the interface between amagnetic material (used for spin polarization) and a channel (anon-magnetic material used for transmission of spin-polarizedelectrons), according to some embodiments. Each figure shows top andside views of the stack after a certain process is complete.

Although FIGS. 12-18 are shown in a particular order, the order of theactions can be modified. Thus, the illustrated embodiments can beperformed in a different order, and some processes may be performed inparallel. Some of the processes and/or operations listed in FIGS. 12-18are optional in accordance with certain embodiments. The numbering ofthe figures presented is for the sake of clarity and is not intended toprescribe an order of operations in which the various processes mustoccur. Additionally, operations from the various process flows may beutilized in a variety of combinations.

FIGS. 12A-C illustrate top view 1200 and side views (1220 and 1230) of astack having a substrate with resist disposition, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 12A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 1220 inFIG. 12B is along the “yy” dotted line, and side view 1230 in FIG. 12Cis along the “xx” dotted line shown in top view 1200 of FIG. 12A. Theprocess begins with forming a magnet pattern over substrate 1201 bydepositing a photo resist 1202. Substrate 1201 can be any of thematerials as discussed with reference to substrate 101.

FIGS. 13A-C illustrate top view 1300 and side views (1320 and 1330) ofthe stack with magnet and thin channel deposition, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 13A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 1320 inFIG. 13B is along the “yy” dotted line, and side view 1330 in FIG. 13Cis along the “xx” dotted line shown in top view 1300 of FIG. 13A.

In some embodiments, after photo resist 1202 is deposited and the magnetpattern is identified, magnet 1302 and non-magnet conductive material1301 is deposited in-situ over substrate 1201 and photo resist 1202 suchthat the interface between magnet 1302 and non-magnet conductivematerial 1301 is preserved (i.e., the interface is smooth). Magnet 1302can be any of the materials discussed with reference to magnet 102.Non-magnet conductive material 1301 can be any of the materialsdiscussed with reference to non-magnet conductive material 103.

FIGS. 14A-C illustrate top view 1400 and side views (1420 and 1430) ofthe stack after lift-off, according to some embodiments of thedisclosure. It is pointed out that those elements of FIGS. 14A-C havingthe same reference numbers (or names) as the elements of any otherfigure can operate or function in any manner similar to that described,but are not limited to such. Here, side view 1420 in FIG. 14B is alongthe “yy” dotted line, and side view 1430 in FIG. 14C is along the “xx”dotted line shown in top view 1400 of FIG. 14A.

In some embodiments, the process of lift-off is performed afterdepositing magnet 1302 and non-magnet conductive layer 1301. In someembodiments, after lift-off, the magnet 1302 and non-magnet conductivematerial 1302 over the defined magnet regions are left exposed. Duringlift-off, regions covered with resist 1202 are removed leaving behindsubstrate 1201 and the defined magnet “bar” regions.

FIGS. 15A-C illustrate top view 1500 and side views (1520 and 1530) ofthe stack after resist deposition and selective etching to form patternsfor channel and pad, according to some embodiments of the disclosure. Itis pointed out that those elements of FIGS. 15A-C having the samereference numbers (or names) as the elements of any other figure canoperate or function in any manner similar to that described, but are notlimited to such. Here, side view 1520 in FIG. 15B is along the “yy”dotted line through the middle of the stack shown in top view 1500 ofFIG. 15A, while side view 1530 in FIG. 15C is along the “xx” dottedline.

In some embodiments, after lift-off, channel and/or pad patterns areformed by resist 1501. The resist 1501 is deposited such that someregions of non-magnet conductive material 1301 remain exposed for padand channel formation. In this example, the channel is formed along thedotted line “yy.”

FIGS. 16A-C illustrate top 1600 and side views (1620 and 1630) of thestack after thick channel metal deposition, according to someembodiments of the disclosure. It is pointed out that those elements ofFIGS. 16A-C having the same reference numbers (or names) as the elementsof any other figure can operate or function in any manner similar tothat described, but are not limited to such. Here, side view 1620 inFIG. 16B is along the “yy” dotted line, and side view 1630 in FIG. 16Cis along the “xx” dotted line shown in top view 1600 of FIG. 16A.

In some embodiments, after depositing resist 1301, a thick layer ofanother non-magnet conductive layer 1601 (which may be the same materialas non-magnet conductive layer 1301) is deposited over the entireregion. In some embodiments, non-magnet conductive layer 1301 is formedof a material different than non-magnet conductive layer 1601.Non-magnet conductive layer 1601 is thicker than non-magnet conductivelayer 1301. For example, non-magnet conductive layer 1601 is 150 nmthick and non-magnet conductive layer 1301 is 30 nm thick.

FIGS. 17A-C illustrate top view 1700 and side views (1720 and 1730) ofthe stack after lift-off of region defined by the resist deposition,according to some embodiments of the disclosure. It is pointed out thatthose elements of FIGS. 17A-C having the same reference numbers (ornames) as the elements of any other figure can operate or function inany manner similar to that described, but are not limited to such. Here,side view 1720 in FIG. 17B is along the “yy” dotted line, and Side view1730 in FIG. 17C is along the “xx” dotted line shown in top view 1700 ofFIG. 17A, while side view 1730 in FIG. 17C is along the “xx” dottedline.

In some embodiments, after depositing non-magnet conductive layer 1601,thin layer of non-magnet conductive layer 1301 is outlined (the dottedregion) and the remainder region is identified as non-magnet conductivelayer 1601. In some embodiments, after depositing the non-magnetconductive layer 1601, the process of lift-off repeated. After lift-off(i.e., between FIG. 16A and FIG. 17A) there are regions of both thin andthick non-magnet conductive layers 1301 and 1601, respectively.

FIGS. 18A-C illustrate top view 1800 and side views (1820 and 1830) ofthe stack after selective etch of non-magnet conductive material,according to some embodiments of the disclosure. It is pointed out thatthose elements of FIGS. 18A-B having the same reference numbers (ornames) as the elements of any other figure can operate or function inany manner similar to that described, but are not limited to such. Here,side view 1820 in FIG. 18B is along the “yy” dotted line through themiddle of the stack shown in top view 1800 of FIG. 18A, while side view1830 in FIG. 18C is along the “xx” dotted line.

In some embodiments, after lift-off, the non-magnet conductive layers,1301 and 1601, are selectively etched using a specific time tocompletely remove only the exposed portions of the thin non-magnetconductive layer 1301 layer on top of magnet 1302. As a cost of doingthis timed etch process, the non-magnetic material 1601 (if of the samematerial at 1301) will also be reduced in thickness by the same value,according to some embodiments. But since the non-magnetic material 1601started out much thicker than non-magnetic material 1301, there willstill be plenty of the non-magnetic material 1601 after the etch processis complete, according to some embodiments. The remaining non-magneticmaterial 1601 will form the conductive channel and interconnect pads ofthe device, according to some embodiments.

To seek a way to continue integrated circuit (IC) scaling and makecomputation more energy efficient, spintronic devices can be used. Inspintronic devices, electron spins carry and store the information. Onefeature of such devices is their non-volatility (i.e., the computationalstate is preserved even when power to the circuit is turned off). Thisfeature opens a path to normally-off, instantly-on logic chips whichconsume much less static power and thus are very desirable for mobilesystems. Another feature of spintronic devices is that a collectivestate of particles (rather than individual electrons) experiencesswitching. Thus, spintronic devices have a much lower limit of switchingenergy per bit. The supply voltage of a spintronic device may not berelated to leakage current and can be reduced to tens of millivolts.This leads to lower active power.

One example of spintronic devices is an all-spin logic (ASL) device.FIG. 19A illustrates a side view 1900 of a lateral spin logic deviceside enabled in-situ process flow, according to some embodiments of thedisclosure. Side view 1900 illustrates first layer 1901 of non-magneticmaterial (e.g., Cu), via 1902 (e.g., Cu), oxide 1903, second layer 1904of non-magnetic material (e.g., Cu), ferromagnetic layer 1905 formedin-situ with non-magnetic material (e.g., Cu) capping 1906/1907, andthird layer 1907 of non-magnetic material (e.g., Cu) coupled together asshown.

FIG. 19B illustrate a bit schematic view 1920 of lateral spin logicdevice 1900 (e.g., an ASL device) enabled by the in-situ process,according to some embodiments of the disclosure. It is pointed out thatthose elements of FIG. 19B having the same reference numbers (or names)as the elements of any other figure can operate or function in anymanner similar to that described, but are not limited to such.

The ASL device 1920 includes ferromagnets (FM) 1921 a and 1921 b withrespective terminals. In this example, the respective terminals arecoupled to power supply (Vdd). FM 1921 a and FM 1921 b extend in thex-direction (also called first direction). In ASL, each FM (e.g. 1921 a)has an output (“right”) side (e.g., its interface with the channelportion 1922 b) and an input (“left”) side (e.g., its interface with thechannel portion 1922 a), separated by spacer 1924 a. Similar structureexists for other ferromagnets (e.g. 1921 b). Spacers 1924 a and 1924 bare made from insulating material. Conducting non-magnetic (NM) metalchannels 1922 connect the output side of the previous stage FM and theinput side of the next stage FM. The conducting NM channel 1922 isdeposited in-situ on the FMs 1921 a and 1921 b, and the ASL device isfabricated using the process described with reference to severalembodiments.

Coupled to the right side of each spacer are other NM 1923 a and NM 1903b which are coupled to ground (Vss). In one embodiment, tunnelingbarrier on the input side can be removed which is easier to fabricateand has a smaller resistance in the spin injection path. ASL devicesoperate by spin-polarized currents flowing through a non-magnetic metalchannel from the output side of a driving FM, and resulting in spintransfer torque (STT) exerted on the input side of a driven FM. Themagnitude and direction of torques determine the final state ofmagnetization in the driven FMs.

The majority of magnetic moments of electrons in an FM (1921 a and/or1921 b) points in the direction of magnetization. The x, y, and z unitvectors in FIG. 19B show the positive directions for each axis. The FMdimensions are selected such that its easy and hard axes are x-axis andz-axis, respectively. The magnetization of every FM has two stablestates—in either the positive (+x) and negative (−x) direction. When itsmagnetization points in +x direction, it is treated as logic 1; and whenit points in −x direction, it is treated as logic 0. Furthermore, inFIG. 19B the non-magnetic metal wires 1922 are channels, and 1923 a/1923b are ground leads. Spacers 1924 a/1924 b prevent currents flowing fromone channel (e.g., first portion 1922 a) to the next (i.e., secondportion 1922 b). Vdd and Vss are the power supply voltage and the groundvoltage, respectively.

The non-reciprocity (i.e., input/output distinction) in ASL devices, forlogic implementation, is enabled by placing the ground lead (e.g., 1923a) closer to one of the FMs (e.g., 1921 a). Similarly, FM 1921 b iscloser to the ground lead 1923 b. For the portion of the channel 1922 b,the driving FM is 1921 a and the driven FM is 1921 b. Even though theareas of the input and output sides may be designed to be identical, theground lead (e.g., 1923 b) is close to the output side of every FM(e.g., 1921 b). Therefore, the resistance from Vdd to Vss is smaller onthe output side (i.e., path through 1921 a, 1922 b, and 1923 b) than onthe input side (i.e., path through 1921 b, 1922 b, and 1923 b), and thecurrent is larger at the output side. Thus, the spin-polarized densityis larger on the output side than that on the input side. That creates anet spin-polarized current from the output side of the driving FM 1921 ato the input side of the driven FM 1921 b. By these means multiple ASLdevices can be cascaded input-to-output, without additional convertingstages (i.e., concatenability).

In addition, FMs 1921 a and 1921 b have two stable, low energy states(e.g., magnetization in +x and −x directions), and spin dissipationcauses magnetization to evolve toward the stable states. Therefore, theoutput of each stage starts in one of these stable states. In otherwords, the spin signal does not degrade from stage to stage and can beregenerated from relatively small spin-polarized currents if they areabove the threshold value determined by the FM energy barrier (i.e.,amplification). These properties make ASL devices suitable for logicimplementations.

For positive supply voltages, electrons traverse from Vss to Vdd. FMs1921 a/1921 b extract electrons from 1922 with magnetic momentspolarized in the same direction as their magnetization. This leaves theaccumulation of spins with opposite magnetic moments in 1922 under FMs1921 a/1921 b. Due to channel 1922 resistance and the position of theground lead (1923 a), the charge current in the output side is muchhigher than that in the input side. Thus, the accumulated density ofspins is higher on the output side. Electrons diffuse from output to theinput side and exert STT on the driven FM. If STT is over a certainthreshold value, the driven FM magnetization switches to the directionopposite to the driving FM magnetization. Hence, ASL device 1920 shownin FIG. 19B operates as an inverter for positive supply voltages.Similarly, for negative supply voltages the device operates as a buffer,and the magnetization of the driven FM follows (“copies”) that of thedriving FM.

FIG. 20 illustrates a low width lateral spin valve 2000 used as a readhead sensor enabled by the in-situ process, according to someembodiments of the disclosure. In this example, recording medium formedof magnets is used to store data. Data is written into the recordingmedium via an inductive write element. To read data, a low width lateralspin valve is used as a read head sensor. This read head sensor, in someembodiments, is formed using the in-situ process described in variousembodiments.

FIGS. 21A-B illustrates images 2100 and 2120 of formation of a magnetictexture that can be seen by Transmission Electron Microscopy (TEM). Insome embodiments, a different structure is targeted for each magneticmaterial and substrate choice. Image 2100 is for Co₂FeGeGa. Here, thecrystallography attempted is: Ag Face-Centered-Cubic (FCC) a=4.05 A, 225space group, CFGG a=5.737 A a/sqrt(2)=4.067 A 225 space group, where ‘a’is a lattice constant. There are number of such ideal interfaces eachwith a specific orientation and structure. For a generic Heusler alloy,the attempted structure is provided by 2200.

In some embodiments, the lattice constant of a material forming theinterface of the layer of the non-magnet conductive material (e.g., oneof: Cu Ag, Al, Au, Bi, BiSe, BiAu, Cu alloyed or doped with Ir, Os, Bi,or Si) is in a range of 3 A to 10 A. In some embodiments, the latticeconstant of a material forming the interface of the magnet is in a rangeof 3 A to 10 A. In some embodiments, a crystal structure of the magnetbelongs to a Heusler phase characterized by X2 YZ or X2 YZ0.5P0.5.

FIG. 22 illustrates a smart device or a computer system or a SoC(System-on-Chip) with lateral spin logic devices formed from in-situdeposited magnetic stacks, according to some embodiments. It is pointedout that those elements of FIG. 22 having the same reference numbers (ornames) as the elements of any other figure can operate or function inany manner similar to that described, but are not limited to such.

FIG. 22 illustrates a block diagram of an embodiment of a mobile devicein which flat surface interface connectors could be used. In someembodiments, computing device 2200 represents a mobile computing device,such as a computing tablet, a mobile phone or smart-phone, awireless-enabled e-reader, or other wireless mobile device. It will beunderstood that certain components are shown generally, and not allcomponents of such a device are shown in computing device 2200.

In some embodiments, computing device 2200 includes a first processor2210 with lateral spin logic devices formed from in-situ depositedmagnetic stacks, according to some embodiments discussed. Other blocksof the computing device 2200 may also include the lateral spin logicdevices formed from in-situ deposited magnetic stacks of someembodiments. The various embodiments of the present disclosure may alsocomprise a network interface within 2270 such as a wireless interface sothat a system embodiment may be incorporated into a wireless device, forexample, cell phone or personal digital assistant.

In one embodiment, processor 2210 (and/or processor 2290) can includeone or more physical devices, such as microprocessors, applicationprocessors, microcontrollers, programmable logic devices, or otherprocessing means. The processing operations performed by processor 2210include the execution of an operating platform or operating system onwhich applications and/or device functions are executed. The processingoperations include operations related to I/O (input/output) with a humanuser or with other devices, operations related to power management,and/or operations related to connecting the computing device 2200 toanother device. The processing operations may also include operationsrelated to audio I/O and/or display I/O.

In one embodiment, computing device 2200 includes audio subsystem 2220,which represents hardware (e.g., audio hardware and audio circuits) andsoftware (e.g., drivers, codecs) components associated with providingaudio functions to the computing device. Audio functions can includespeaker and/or headphone output, as well as microphone input. Devicesfor such functions can be integrated into computing device 2200, orconnected to the computing device 2200. In one embodiment, a userinteracts with the computing device 2200 by providing audio commandsthat are received and processed by processor 2210.

Display subsystem 2230 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the computing device 2200. Displaysubsystem 2230 includes display interface 2232, which includes theparticular screen or hardware device used to provide a display to auser. In one embodiment, display interface 2232 includes logic separatefrom processor 2210 to perform at least some processing related to thedisplay. In one embodiment, display subsystem 2230 includes a touchscreen (or touch pad) device that provides both output and input to auser.

I/O controller 2240 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 2240 is operable tomanage hardware that is part of audio subsystem 2220 and/or displaysubsystem 2230. Additionally, I/O controller 2240 illustrates aconnection point for additional devices that connect to computing device2200 through which a user might interact with the system. For example,devices that can be attached to the computing device 2200 might includemicrophone devices, speaker or stereo systems, video systems or otherdisplay devices, keyboard or keypad devices, or other I/O devices foruse with specific applications such as card readers or other devices.

As mentioned above, I/O controller 2240 can interact with audiosubsystem 2220 and/or display subsystem 2230. For example, input througha microphone or other audio device can provide input or commands for oneor more applications or functions of the computing device 2200.Additionally, audio output can be provided instead of, or in addition todisplay output. In another example, if display subsystem 2230 includes atouch screen, the display device also acts as an input device, which canbe at least partially managed by I/O controller 2240. There can also beadditional buttons or switches on the computing device 2200 to provideI/O functions managed by I/O controller 2240.

In one embodiment, I/O controller 2240 manages devices such asaccelerometers, cameras, light sensors or other environmental sensors,or other hardware that can be included in the computing device 2200. Theinput can be part of direct user interaction, as well as providingenvironmental input to the system to influence its operations (such asfiltering for noise, adjusting displays for brightness detection,applying a flash for a camera, or other features).

In one embodiment, computing device 2200 includes power management 2250that manages battery power usage, charging of the battery, and featuresrelated to power saving operation. Memory subsystem 2260 includes memorydevices for storing information in computing device 2200. Memory caninclude nonvolatile (state does not change if power to the memory deviceis interrupted) and/or volatile (state is indeterminate if power to thememory device is interrupted) memory devices. Memory subsystem 2260 canstore application data, user data, music, photos, documents, or otherdata, as well as system data (whether long-term or temporary) related tothe execution of the applications and functions of the computing device2200.

Elements of embodiments are also provided as a machine-readable medium(e.g., memory 2260) for storing the computer-executable instructions(e.g., instructions to implement any other processes discussed herein).The machine-readable medium (e.g., memory 2260) may include, but is notlimited to, flash memory, optical disks, CD-ROMs, DVD ROMs, RAMs,EPROMs, EEPROMs, magnetic or optical cards, phase change memory (PCM),or other types of machine-readable media suitable for storing electronicor computer-executable instructions. For example, embodiments of thedisclosure may be downloaded as a computer program (e.g., BIOS) whichmay be transferred from a remote computer (e.g., a server) to arequesting computer (e.g., a client) by way of data signals via acommunication link (e.g., a modem or network connection).

Connectivity 2270 includes hardware devices (e.g., wireless and/or wiredconnectors and communication hardware) and software components (e.g.,drivers, protocol stacks) to enable the computing device 2200 tocommunicate with external devices. The computing device 2200 could beseparate devices, such as other computing devices, wireless accesspoints or base stations, as well as peripherals such as headsets,printers, or other devices.

Connectivity 2270 can include multiple different types of connectivity.To generalize, the computing device 2200 is illustrated with cellularconnectivity 2272 and wireless connectivity 2274. Cellular connectivity2272 refers generally to cellular network connectivity provided bywireless carriers, such as provided via GSM (global system for mobilecommunications) or variations or derivatives, CDMA (code divisionmultiple access) or variations or derivatives, TDM (time divisionmultiplexing) or variations or derivatives, or other cellular servicestandards. Wireless connectivity (or wireless interface) 2274 refers towireless connectivity that is not cellular, and can include personalarea networks (such as Bluetooth, Near Field, etc.), local area networks(such as Wi-Fi), and/or wide area networks (such as WiMax), or otherwireless communication.

Peripheral connections 2280 include hardware interfaces and connectors,as well as software components (e.g., drivers, protocol stacks) to makeperipheral connections. It will be understood that the computing device2200 could both be a peripheral device (“to” 2282) to other computingdevices, as well as have peripheral devices (“from” 2284) connected toit. The computing device 2200 commonly has a “docking” connector toconnect to other computing devices for purposes such as managing (e.g.,downloading and/or uploading, changing, synchronizing) content oncomputing device 2200. Additionally, a docking connector can allowcomputing device 2200 to connect to certain peripherals that allow thecomputing device 2200 to control content output, for example, toaudiovisual or other systems.

In addition to a proprietary docking connector or other proprietaryconnection hardware, the computing device 2200 can make peripheralconnections 1680 via common or standards-based connectors. Common typescan include a Universal Serial Bus (USB) connector (which can includeany of a number of different hardware interfaces), DisplayPort includingMiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI),Firewire, or other types.

Reference in the specification to “an embodiment,” “one embodiment,”“some embodiments,” or “other embodiments” means that a particularfeature, structure, or characteristic described in connection with theembodiments is included in at least some embodiments, but notnecessarily all embodiments. The various appearances of “an embodiment,”“one embodiment,” or “some embodiments” are not necessarily allreferring to the same embodiments. If the specification states acomponent, feature, structure, or characteristic “may,” “might,” or“could” be included, that particular component, feature, structure, orcharacteristic is not required to be included. If the specification orclaim refers to “a” or “an” element, that does not mean there is onlyone of the elements. If the specification or claims refer to “anadditional” element, that does not preclude there being more than one ofthe additional element.

Furthermore, the particular features, structures, functions, orcharacteristics may be combined in any suitable manner in one or moreembodiments. For example, a first embodiment may be combined with asecond embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

While the disclosure has been described in conjunction with specificembodiments thereof, many alternatives, modifications and variations ofsuch embodiments will be apparent to those of ordinary skill in the artin light of the foregoing description. For example, other memoryarchitectures e.g., Dynamic RAM (DRAM) may use the embodimentsdiscussed. The embodiments of the disclosure are intended to embrace allsuch alternatives, modifications, and variations as to fall within thebroad scope of the appended claims.

In addition, well known power/ground connections to integrated circuit(IC) chips and other components may or may not be shown within thepresented figures, for simplicity of illustration and discussion, and soas not to obscure the disclosure. Further, arrangements may be shown inblock diagram form in order to avoid obscuring the disclosure, and alsoin view of the fact that specifics with respect to implementation ofsuch block diagram arrangements are highly dependent upon the platformwithin which the present disclosure is to be implemented (i.e., suchspecifics should be well within purview of one skilled in the art).Where specific details (e.g., circuits) are set forth in order todescribe example embodiments of the disclosure, it should be apparent toone skilled in the art that the disclosure can be practiced without, orwith variation of, these specific details. The description is thus to beregarded as illustrative instead of limiting.

The following examples pertain to further embodiments. Specifics in theexamples may be used anywhere in one or more embodiments. All optionalfeatures of the apparatus described herein may also be implemented withrespect to a method or process.

For example, an apparatus a method is provided which comprises: forminga magnet on a substrate or a template, the magnet having an interface;and forming a first layer of non-magnet conductive material on theinterface of the magnet such that the magnet and the layer of non-magnetconductive material are formed in-situ. In some embodiments, the methodcomprises: selectively etching the first layer. In some embodiments, themethod comprises: defining the position of spin channel and accessinterconnecting structures on the selectively etched first layer. Insome embodiments, the method comprises: simultaneously depositing thespin channel and the access interconnecting structures to reduceparasitic contact resistance.

In some embodiments, the method comprises: forming a second layer ofnon-magnet conductive material over the first layer, the second layerforming a spin channel. In some embodiments, the method comprises:cleaning an interface between the first and second layers of thenon-magnet conductive material to provide spin and charge contact. Insome embodiments, the method comprises: annealing the formed magnetafter cleaning the interface. In some embodiments, the first and secondlayers are formed using different masks or combination of masks.

In some embodiments, forming the magnet comprises epitaxially growingthe magnet on the template. In some embodiments, the substrate is oneof: MgO, STO, BFO, Ag, GdSeO₃, Nb:STO, or DyScO₃. In some embodiments,the non-magnet conductive material is one of: Cu Ag, Al, Au, Bi, BiSe,BiAu, Cu alloyed or doped with Ir, Os, Bi, or Si. In some embodiments,the first layer of non-magnet conductive material on the interface ofthe magnet is formed such that the interface of the magnet is notexposed to air or impurities.

In some embodiments, the magnet is formed under crystallographic,electromagnetic, or thermodynamic conditions. In some embodiments, themethod comprises annealing the formed magnet after forming the firstlayer of non-magnet conductive material on the interface of the magnet.In some embodiments, a lattice constant of a material forming theinterface of the first layer of the non-magnet conductive material is ina range of 3 A to 10 A. In some embodiments, a lattice constant of amaterial forming the interface of the magnet is in a range of 3 A to 10A. In some embodiments, a crystal structure of the magnet belongs to aHeusler phase characterized by X2 YZ or X2 YZ0.5P0.5.

In another example, an apparatus is provided which comprises: a magnetformed on a substrate or a template, the magnet being formed undercrystallographic, electromagnetic, or thermodynamic conditions, themagnet having an interface; and a first layer of non-magnet conductivematerial formed on the interface of the magnet such that the magnet andthe layer of non-magnet conductive material are formed in-situ. In someembodiments, the first layer is selectively etched along with themagnet. In some embodiments, the apparatus comprises a spin channel anda pad formed on the selectively etched first layer. In some embodiments,the apparatus comprises a second layer of non-magnet conductive materialformed over the first layer, the second layer forming a spin channel. Insome embodiments, the apparatus comprises: a spin and charge contactprovided by cleaning an interface between the first and second layers ofnon-magnet conductive material.

In some embodiments, the substrate is one of: MgO, STO, BFO, Ag, GdSeO₃,Nb:STO, or DyScO₃. In some embodiments, the non-magnet conductivematerial is one of: Cu Ag, Al, Au, Bi, BiSe, BiAu, Cu alloyed or dopedwith Ir, Os, Bi, or Si. In some embodiments, the first layer ofnon-magnet conductive material on the interface of the magnet is formedin vacuum. In some embodiments, a lattice constant of a material formingthe interface of the first layer of the non-magnet conductive materialis in a range of 3 A to 10 A. In some embodiments, a lattice constant ofa material forming the interface of the magnet is in a range of 3 A to10 A. In some embodiments, a crystal structure of the magnet belongs toa Heusler phase characterized by X2 YZ or X2 YZ0.5P0.5.

In another example, a system is provided which comprises: a processor; amemory having lateral spin value devices, at least one of whichcomprises an apparatus according to the apparatus described above; and awireless interface for allowing the processor to communicate withanother device. In some embodiments, the system comprises: a displayinterface for coupling to a display unit, the display interface toprovide content processed by the processor for displaying by the displayunit. In some embodiments, the system comprises: a magnetic sensor tosense magnetic fields from the memory. In some embodiments, the magneticsensor comprises a lateral spin valve for reading data from the memory.

In another example, an apparatus is provided which comprises: means forforming a magnet on a substrate or a template, the magnet having aninterface; and means for forming a first layer of non-magnet conductivematerial on the interface of the magnet such that the magnet and thelayer of non-magnet conductive material are formed in-situ. In someembodiments, the apparatus comprises: means for forming selectivelyetching the first layer. In some embodiments, the apparatus comprises:means for forming defining the position of spin channel and accessinterconnecting structures on the selectively etched first layer. Insome embodiments, the apparatus comprises: means for formingsimultaneously depositing the spin channel and the accessinterconnecting structures to reduce parasitic contact resistance.

In some embodiments, the apparatus comprises: means for forming a secondlayer of non-magnet conductive material over the first layer, the secondlayer forming a spin channel. In some embodiments, the apparatuscomprises: means for forming cleaning an interface between the first andsecond layers of the non-magnet conductive material to provide spin andcharge contact. In some embodiments, the first and second layers areformed using different masks or combination of masks. In someembodiments, the means for forming the magnet comprises means forepitaxially growing the magnet on the template. In some embodiments, thesubstrate is one of: MgO, STO, BFO, Ag, GdSeO₃, Nb:STO, or DyScO₃. Insome embodiments, the non-magnet conductive material is one of: Cu Ag,Al, Au, Bi, BiSe, BiAu, Cu alloyed or doped with Ir, Os, Bi, or Si.

In some embodiments, the first layer of non-magnet conductive materialon the interface of the magnet is formed such that the interface of themagnet is not exposed to air or impurities. In some embodiments, themagnet is formed under crystallographic, electromagnetic, orthermodynamic conditions. In some embodiments, the apparatus comprises:means for annealing the formed magnet after forming the first layer ofnon-magnet conductive material on the interface of the magnet.

In some embodiments, a lattice constant of a material forming theinterface of the first layer of the non-magnet conductive material is ina range of 3 A to 10 A. In some embodiments, a lattice constant of amaterial forming the interface of the magnet is in a range of 3 A to 10A. In some embodiments, a crystal structure of the magnet belongs to aHeusler phase characterized by X2 YZ or X2 YZ0.5P0.5.

An abstract is provided that will allow the reader to ascertain thenature and gist of the technical disclosure. The abstract is submittedwith the understanding that it will not be used to limit the scope ormeaning of the claims. The following claims are hereby incorporated intothe detailed description, with each claim standing on its own as aseparate embodiment.

1-29. (canceled)
 30. A method comprising: forming a magnet on asubstrate or a template, the magnet having an interface; and forming afirst layer of non-magnet conductive material on the interface of themagnet such that the magnet and the layer of non-magnet conductivematerial are formed in-situ.
 31. The method of claim 30 comprisingselectively etching the first layer.
 32. The method of claim 31comprising defining the position of spin channel and accessinterconnecting structures on the selectively etched first layer. 33.The method of claim 32 comprising simultaneously depositing the spinchannel and the access interconnecting structures to reduce parasiticcontact resistance.
 34. The method of claim 31 comprising forming asecond layer of non-magnet conductive material over the first layer, thesecond layer forming a spin channel.
 35. The method of claim 34comprising cleaning an interface between the first and second layers ofthe non-magnet conductive material to provide spin and charge contact.36. The method of claim 35 comprises annealing the formed magnet aftercleaning the interface.
 37. The method of claim 34, wherein the firstand second layers are formed using different masks or combination ofmasks.
 38. The method of claim 30, wherein forming the magnet comprisesepitaxially growing the magnet on the template.
 39. The method of claim30, wherein the substrate includes one of: MgO, STO, BFO, Ag, GdSeO₃,Nb:STO, or DyScO₃.
 40. The method of claim 30, wherein the non-magnetconductive material includes one of: Cu Ag, Al, Au, Bi, BiSe, BiAu, Cualloyed or doped with Ir, Os, Bi, or Si.
 41. The method of claim 30,wherein the first layer of non-magnet conductive material on theinterface of the magnet is formed such that the interface of the magnetis not exposed to air or impurities.
 42. The method of claim 30, whereina crystal structure of the magnet belongs to a Heusler phasecharacterized by X2 YZ or X2 YZ0.5P0.5.
 43. The method of claim 30comprises annealing the formed magnet after forming the first layer ofnon-magnet conductive material on the interface of the magnet.
 44. Anapparatus comprising: a magnet formed on a substrate or a template, themagnet being formed under crystallographic, electromagnetic, orthermodynamic conditions, the magnet having an interface; and a firstlayer of non-magnet conductive material formed on the interface of themagnet such that the magnet and the layer of non-magnet conductivematerial are formed in-situ.
 45. The apparatus of claim 44, wherein thefirst layer is selectively etched along with the magnet.
 46. Theapparatus of claim 45 comprising a spin channel and a pad formed on theselectively etched first layer.
 47. The apparatus of claim 45comprising: a second layer of non-magnet conductive material formed overthe first layer, the second layer forming a spin channel; and a spin andcharge contact provided by cleaning an interface between the first andsecond layers of non-magnet conductive material.
 48. A systemcomprising: a processor; a memory having lateral spin value devices, atleast one of which comprises: a magnet formed on a substrate or atemplate, the magnet being formed under crystallographic,electromagnetic, or thermodynamic conditions, the magnet having aninterface; and a first layer of non-magnet conductive material formed onthe interface of the magnet such that the magnet and the layer ofnon-magnet conductive material are formed in-situ; and a wirelessinterface to allow the processor to communicate with another device. 49.The system of claim 48 comprises a display interface for coupling to adisplay unit, the display interface to provide content processed by theprocessor for displaying by the display unit.